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specification of DCX114YU-7-F
Category
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Discrete Semiconductor Products
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
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Mfr
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Diodes Incorporated
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Series
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-
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Transistor Type
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1 NPN, 1 PNP - Pre-Biased (Dual)
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Current - Collector (Ic) (Max)
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100mA
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Voltage - Collector Emitter Breakdown (Max)
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50V
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Resistor - Base (R1)
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10kOhms
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Resistor - Emitter Base (R2)
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47kOhms
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DC Current Gain (hFE) (Min) @ Ic, Vce
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68 @ 10mA, 5V
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Vce Saturation (Max) @ Ib, Ic
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300mV @ 250µA, 5mA
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Current - Collector Cutoff (Max)
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500nA
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Frequency - Transition
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250MHz
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Power - Max
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200mW
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Mounting Type
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Surface Mount
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Package / Case
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6-TSSOP, SC-88, SOT-363
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Supplier Device Package
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SOT-363
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