Shenzhen Xinyuanpeng Technology Co., Ltd.
Shenzhen Xinyuanpeng Technology Co., Ltd.
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Fifth Generation HEXFETS from Intemational Rectifieutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thisbenefit, combined with the fast switching speed andruggedized device design that HEXFET PowerMOSFETS are well known for, provides the designerwith an extremely efficient and reliable device for usein a wide vanety of applications.
The TO-220 package is universally preferred for allcommercialindustrial applications at power dissipationlevels to approximately 50 watts. The low thermalresistance and low package cost of the TO-220contribute to its wide acceptance throughout theindustry.
Specification of IRF9540NPBF
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Mfr
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Infineon Technologies
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Series
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HEXFET
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Product Status
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Active
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FET Type
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P-Channel
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Technology
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MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss)
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100 V
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Current - Continuous Drain (Id) 25°C
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23A (Tc)
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Drive Voltage (Max Rds On, Min Rds On)
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10V
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Rds On (Max) Id, Vgs
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117mOhm 11A, 10V
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Vgs(th) (Max) Id
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4V 250µA
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Gate Charge (Qg) (Max) Vgs
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97 nC 10 V
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Vgs (Max)
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±20V
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Input Capacitance (Ciss) (Max) Vds
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1300 pF 25 V
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FET Feature
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-
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Power Dissipation (Max)
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140W (Tc)
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Operating Temperature
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-55°C ~ 150°C (TJ)
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Mounting Type
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Through Hole
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Supplier Device Package
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TO-220AB
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Package / Case
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TO-220-3
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